FQP12N60C/FQPF12N60C is a 600V N-channel MOSFET produced by Fairchild with a maximum current of 12A, 0.65 ohms on-state resistance, 21 picofarads capacitance and 48 nanoamperes gate charge, suitable for high efficiency switched mode power supplies, active power factor correction, half-bridge topology electronic lamp ballasts and other applications
The Fairchild FQP12N60C and FQPF12N60C are N‑Channel enhancement mode power MOSFETs built with planar stripe DMOS technology. They are designed for high‑efficiency switched‑mode power supplies, active power factor correction, and electronic lamp ballasts.
The document provides absolute maximum ratings, thermal characteristics, electrical parameters, switching performance, and package dimensions for the TO‑220 and TO‑220F variants, along with trademark and disclaimer information.
| Drain‑Source Voltage (VDS) | 600 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 12 A |
| Pulsed Drain Current (ID) (Note 1) | 48 A |
| Gate‑Source Voltage (VGS) | +30 V |
| On‑Resistance (RDS(on)) @ VGS=10 V | 0.652 Ω |
| Typical Gate Charge (Qg) | 48 nC |
| Input Capacitance (Ciss) typical | 1760 pF |
| Output Capacitance (Coss) typical | 182 pF |
| Reverse Transfer Capacitance (Crss) typical | 21 pF |
| Power Dissipation (PD) @ 25 °C | 225 W |
| Thermal Resistance Junction‑to‑Case (RθJC) | 0.56 °C/W |
The maximum drain‑source voltage is 600 V.
It can handle a continuous drain current of 12 A at 25 °C.
The typical total gate charge is 48 nC.
The on‑resistance is 0.652 Ω at VGS = 10 V.