SPP04N80C3 is a high voltage power transistor with ultra low gate charge, periodic avalanche rated, extreme dv/dt rated, ultra low effective capacitances and improved transconductance. It is available in PG-TO220 package.
The document provides detailed specifications for Infineon's SPP04N80C3 and SPA04N80C3 Cool MOS™ power transistors. It includes maximum ratings, electrical and thermal characteristics, and typical performance curves.
Key sections cover maximum voltage and current limits, gate charge parameters, thermal impedance, and avalanche energy limits, enabling designers to evaluate suitability for high‑voltage applications.
| Maximum Drain‑Source Voltage | 800 V |
|---|---|
| Thermal Resistance Junction‑to‑Case | 2 K/W |
The single‑pulse avalanche energy is rated at 170 mJ.
The total gate charge is specified as 20 – 26 nC.
The reverse recovery time is 520 ns.