ipa60r199cp is a power transistor with ultra-low gate charge, extreme dv/dt rating and high peak current capability.
The IPA60R199CP is a CoolMOS® power transistor designed for hard‑switching SMPS topologies. It features a low figure‑of‑merit (Rds·Qg), ultra‑low gate charge, high peak current capability, and is RoHS compliant.
The document lists maximum ratings, thermal characteristics, static and dynamic electrical parameters, gate‑charge data, avalanche energy, and package dimensions for the PG‑TO220 package.
| Continuous drain current (Id) | 16 A |
|---|---|
| Pulsed drain current (Id,peak) | 51 A |
| On‑state resistance (Rds(on)) | 0.199 Ω |
| Maximum power dissipation (Pd) | 34 W |
| Operating temperature range | -55 °C to 150 °C |
| Gate threshold voltage (Vgs(th)) | 3.0 V to 3.5 V |
| Avalanche energy (single pulse) | 436 mJ |
| Package type | PG‑TO220 |
The continuous drain current is rated at 16 A at 25 °C.
The device can dissipate up to 34 W at a case temperature of 25 °C.
It is specified for operation from –55 °C up to 150 °C.