BSS87 is an N-channel enhanced logic level MOSFET with a maximum voltage of 240V, RDS(on) of 6 ohms, a continuous current of 0.26A, and a dv/dt of 6kV/µs.
The BSS87 is an N‑channel enhancement‑mode MOSFET with a logic‑level gate drive. The document provides the product summary, maximum ratings, and detailed electrical parameters such as drain‑source breakdown voltage, continuous and pulsed drain currents, and on‑state resistance. Thermal characteristics, including junction‑to‑case resistance and temperature limits, are also listed.
Additional sections describe dynamic behavior (gate charge, capacitances, switching times) and typical characteristic curves for output, on‑resistance, gate threshold, and breakdown voltage. The final page contains legal notices, contact information for Infineon Technologies AG, and safety warnings for use in life‑support applications.
| Drain‑Source Breakdown Voltage (Vds) | 240 V |
|---|---|
| Pulsed Drain Current (Id,pulse) | 1.04 A |
| Gate Threshold Voltage (Vgs(th)) typical | 0.8 V – 1.2 V |
| On‑Resistance (Rds(on)) typical | 3.9 mΩ |
The BSS87 can withstand a drain‑source voltage of up to 240 V.