IPD90R1K2C3 CoolMOS™ Power Transistor features the lowest RON x Qg figure-of-merit, extreme dv/dt rating, high peak current capability and is qualified according to JEDEC1) for target applications. It is Pb-free, lead plated, and RoHS compliant.
The IPD90R1K2C3 is a 900 V CoolMOS power transistor offered in a PG‑TO252 package. It is designed for high‑frequency SMPS, quasi‑resonant flyback/forward topologies and other industrial applications. The device features low on‑resistance, ultra‑low gate charge and high peak current capability while meeting RoHS and Pb‑free requirements.
The datasheet provides maximum ratings, thermal and electrical characteristics, dynamic switching parameters, typical output and transfer curves, and package dimensions. It also includes safety and legal disclaimer information from Infineon Technologies AG.
| Maximum power dissipation at 25 °C | 83 W |
|---|---|
| Package type | PG‑TO252 |
| Output capacitance (Coss) at 1 MHz | 35 pF |
It is supplied in a PG‑TO252 surface‑mount package.
Yes, the transistor is Pb‑free and RoHS compliant.