This document describes the features and characteristics of SMBT2907A/MMBT2907A PNP silicon switching transistors, released on March 20, 2006. These features include high DC current gain, low collector-emitter saturation voltage, etc. The document also provides detailed information on maximum ratings, thermal resistance, and electrical characteristics.
The SMBT2907A/MMBT2907A is a PNP silicon switching transistor with high DC current gain (0.1 mA to 500 mA) and low collector‑emitter saturation voltage. Key maximum ratings include a collector‑emitter voltage of 60 V, collector current of 600 mA, and total power dissipation of 330 mW. Electrical characteristics cover DC, AC, and switching parameters such as a transition frequency of 200 MHz and capacitances for collector‑base (8 pF) and emitter‑base (30 pF).\n\nThe device is supplied in an SOT‑23 package with detailed mechanical dimensions and marking layout. The datasheet also includes test circuit diagrams, permissible pulse load information, and standard legal notices from Infineon Technologies AG.
| Collector‑emitter voltage (VCEO) | 60 V |
|---|---|
| Collector current (Ic) | 600 mA |
| Total power dissipation (Ptot) | 330 mW |
| Transition frequency (fT) | 200 MHz |
| Collector‑base capacitance (Ccb) | 8 pF |
| Junction temperature (Tj) | 150 °C |
The maximum collector‑emitter voltage is 60 V.
It is supplied in an SOT‑23 package.
The transition frequency is 200 MHz.
The device can dissipate up to 330 mW.