BSP 373 is a high voltage, high speed, low on-resistance, N-channel power MOSFET. It has a very low gate threshold voltage (VGS(th) = 2.1V to 4.0V) and a high breakdown voltage (V(BR)DSS = 100V). The BSP 373 is suitable for a wide range of applications, including automotive, industrial, and consumer electronics.
The BSP 373 is an N‑channel enhancement‑mode SIPMOS transistor with avalanche‑rated capability. It is supplied in a RoHS‑compliant PG‑SOT‑223 package and is intended for low‑voltage, high‑current applications.
The document provides maximum ratings, static and dynamic electrical characteristics, typical output and transfer curves, and safe operating area information. All values are given for a junction temperature of 25 °C unless otherwise noted.