The IPA50R350CP CoolMOSTM power transistor features the lowest figure of merit RON x Qg, ultra low gate charge, extreme dv/dt rating, high peak current capability, Pb-free lead plating, RoHS compliance. It is qualified according to JEDEC standards. It is designed for hard and soft switching SMPS topologies, CCM PFC for notebook adapters, PDP and LCD TVs, and PWM for notebook adapters, PDP and LCD TVs.
The IPA50R350CP is a CoolMOS CP power transistor offered in a TO‑220 full‑pak package. It is designed for hard and soft‑switching SMPS topologies, including CCM PFC and PWM applications for notebook adapters, PDP and LCD TV. The device features a low figure of merit, ultra‑low gate charge, and high peak current capability, while being Pb‑free and RoHS compliant.
Key electrical and thermal parameters are listed, such as continuous and pulsed drain currents, on‑state resistance, avalanche energy, and power dissipation limits. Detailed static, dynamic, and gate‑charge characteristics are provided to aid designers in evaluating the transistor for high‑frequency and high‑voltage applications.
| Continuous drain current (Id) | 10 A @ 25 °C |
|---|---|
| Pulsed drain current (Id,pulse) | 22 A @ 25 °C |
| Drain‑source on‑state resistance (Rds(on)) | 0.32 Ω typ / 0.35 Ω max @ 25 °C |
| Total gate charge (Qg) | 19 nC typ / 25 nC max |
| Avalanche energy (single pulse) | 246 mJ |
| Power dissipation (Pd) | 32 W @ 25 °C |
| Operating temperature range | -55 °C to 150 °C |
| Package type | TO‑220 Full PAK |
The continuous drain current is rated at 10 A at 25 °C.
The typical on‑state resistance is 0.32 Ω with a maximum of 0.35 Ω at 25 °C.
It can dissipate up to 32 W at 25 °C.
The device is supplied in a TO‑220 Full PAK package.