This datasheet provides detailed information on the BUZ 73 AL SIPMOS ® power transistor. The transistor features an N channel, enhancement mode, avalanche rated and logic level functionality. It has a maximum channel-source breakdown voltage of 200V, a continuous drain current of 5.5A and a 0.6Ω drain-source on-resistance.
This datasheet describes the Infineon BUZ73AL N‑channel SIPMOS power transistor, including its maximum ratings such as continuous drain current, pulsed current, avalanche energy, and operating temperature range. The document also lists detailed static and dynamic electrical characteristics, reverse‑diode parameters, and typical performance curves.
Key sections cover maximum ratings, static and dynamic characteristics, reverse‑diode behavior, power dissipation, typical output and transfer characteristics, on‑resistance curves, capacitance data, gate threshold voltage, and avalanche energy specifications.