IPB50R199CP CoolMOSTM Power Transistor is a power transistor with the lowest RON x Qg, ultra-low gate charge, extreme dv/dt rating, high peak current capability, lead-free lead plating and RoHS compliance.
The IPB50R199CP is a CoolMOS power transistor designed for hard and soft switching SMPS topologies, including ATX, notebook adapters, PDP and LCD TV applications. It offers ultra‑low gate charge, high peak current capability, and RoHS‑compliant, lead‑free construction.
The datasheet lists key electrical and thermal parameters such as continuous drain current, on‑state resistance, gate charge, avalanche energy, and power dissipation, as well as mechanical dimensions and footprint details for the PG‑TO263 package. Additional sections cover dynamic characteristics, safe operating area, and diode switching behavior.
| Continuous drain current (Id) | 17 A |
|---|---|
| On‑state resistance (Rds(on)) typical | 0.199 Ω |
| Gate charge (Qg) typical | 34 nC |
| Maximum power dissipation (Pd) | 139 W |
| Operating temperature range | -55 °C to 150 °C |
| Avalanche energy (single pulse) | 436 mJ (6.6 A, Vpp=50 V) |
The device can handle a continuous drain current of 17 A at 25 °C.
The typical drain‑source on‑state resistance is 0.199 Ω at 25 °C.
The transistor can dissipate up to 139 W at 25 °C.
It is supplied in a PG‑TO263 (3‑lead) surface‑mount package.