This document introduces the SPU03N60S5 and SPD03N60S5 Cool MOS™ power transistors of Rev. 2.4 released on October 5, 2005. These transistors feature new revolutionary high voltage technology, ultra low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra low effective capacitances, and improved transconductance.
The SPU03N60S5 is a high‑voltage, low‑gate‑charge MOSFET from Infineon Technologies. It features a 600 V drain‑source breakdown voltage, ultra‑low gate charge, and a compact PG‑TO251 or PG‑TO252 package.
The document lists maximum ratings, thermal characteristics, and detailed electrical parameters such as on‑state resistance, capacitances, and gate charge. These data help designers evaluate the device for applications requiring high voltage and low loss, such as power supplies and motor drives.
| Continuous drain current (Id) at 25 °C | 3.2 A |
|---|---|
| Power dissipation at 25 °C (Pd) | 38 W |
The device can conduct up to 3.2 A continuously at 25 °C.