BAV199 is a low-leakage diode with a maximum reverse voltage of 85V and medium switching speeds. It can be used for low-leakage applications.
The Infineon BAV199 datasheet provides key electrical parameters for the low‑leakage silicon diode, including reverse voltage, forward current, power dissipation, and temperature limits. Package options (SOT‑23 and TSFP‑3) and marking codes are also listed.
Additional sections cover thermal resistance, detailed DC and AC characteristics, reverse‑current behavior versus temperature, and permissible pulse load limits. The document includes test circuit diagrams and typical measurement conditions.
| Diode reverse voltage (VR) | 80 V |
|---|---|
| Peak reverse voltage (VRM) | 85 V |
| Forward current (If) | 200 mA |
| Junction temperature (Tj) max | 150 °C |
| Storage temperature range (Tst) | -65 °C to 150 °C |
| Thermal resistance (junction‑to‑solder point) | < 360 K/W |
The BAV199 diode is rated for a maximum reverse voltage of 80 V.
The diode can conduct up to 200 mA of forward current.
The BAV199 is specified for a junction temperature up to 150 °C.
The thermal resistance is less than 360 K/W.