This document is the datasheet of SPP24N60CFD CoolMOSTM power transistor. It details the characteristics and parameters of the product, including maximum current, maximum voltage, maximum power consumption, and maximum temperature.
The SPP24N60CFD CoolMOS power transistor is designed for soft‑switching PWM stages and offers ultra‑low gate charge, high peak current capability, and an extreme dv/dt rating. The datasheet lists its key features, maximum ratings, and typical performance curves.
Detailed sections cover product summary, thermal characteristics, electrical specifications, dynamic behavior, reverse‑diode parameters, power dissipation limits, safe operating area, and typical output and gate‑charge characteristics. Mechanical dimensions and package information are also provided.
| Continuous drain current (Id) at 25 °C | 21.7 A |
|---|---|
| On‑state resistance (Rds(on)) typ | 0.15 Ω |
| Total gate charge (Qg) | 110 nC |
| Power dissipation at 25 °C | 240 W |
The device can conduct up to 21.7 A continuously at 25 °C.
Typical Rds(on) is 0.15 Ω at a gate‑source voltage of 10 V.
The total gate charge is about 110 nC from 0 V to 10 V.