This document describes the features and characteristics of SIPMOS® power transistors, including N-channel, enhancement mode, and avalanche-rated.
The BUZ31 is an N‑channel enhancement‑mode SIPMOS power transistor with avalanche‑rated, lead‑free, RoHS‑compliant construction. It is designed for high‑current applications up to 14.5 A continuous drain current and 200 V drain‑source breakdown voltage.
The datasheet provides maximum ratings, static and dynamic electrical characteristics, reverse diode parameters, and typical output and transfer curves, enabling engineers to assess performance and integrate the device into power circuits.