This document is the characteristic parameter table of SPP80N06S2L-07 and SPB80N06S2L-07, including voltage, current, power, temperature, packaging and other information.
This datasheet provides the key specifications for Infineon's SPP80N06S2L-07 and SPB80N06S2L-07 N‑channel power transistors, including electrical, thermal, and dynamic characteristics. It also contains the safe operating area, typical output curves, and packaging information.
The document lists maximum ratings such as continuous drain current, pulsed current, power dissipation, and avalanche energy, as well as detailed parameters like gate threshold voltage, on‑state resistance, and capacitances. Contact information for Infineon Technologies AG and legal notices are included on the final page.
| Power dissipation (P_D) | 210 W |
|---|---|
| Drain‑source on‑state resistance (R_DS(on)) | typ 5.6 mΩ |
The rated power dissipation is 210 W at 25 °C.