BFP540ESD is a NPN silicon RF transistor in stock at Dinghao. It has excellent ESD performance, typical value of 1000 V (HBM), outstanding Gms = 21.5 dB noise figure F = 0.9 dB, and gold metallization ensures the product's high reliability.
The BFP540ESD is an NPN silicon RF transistor designed for ESD‑protected high‑gain, low‑noise amplifier applications. It offers excellent ESD performance (typical 1000 V HBM), a high gain of 21.5 dB, and a low noise figure of 0.9 dB. The device is supplied in a compact SOT‑343 package with gold metallization for reliability.
The datasheet lists maximum ratings, DC and AC electrical characteristics, thermal resistance, permissible pulse loads, and detailed package dimensions. It also includes transition frequency data (21‑30 GHz), power gain curves, and third‑order intercept points, enabling designers to evaluate the transistor for high‑frequency circuits.
| Collector‑emitter breakdown voltage (VCEO) | 45 V |
|---|---|
| Collector current (Ic) max | 80 mA |
| Base current (Ib) max | 8 mA |
| Total power dissipation (Ptot) max | 250 mW |
| Transition frequency (fT) | 21‑30 GHz |
| Noise figure (typ) | 0.9 dB |
| Maximum power gain (Gms) | 21.5 dB |
| Package type | SOT‑343 |
| Storage temperature range | -65 °C to 150 °C |
The maximum collector current is 80 mA.
The transition frequency (fT) ranges from 21 GHz to 30 GHz.
It is supplied in an SOT‑343 surface‑mount package.