SPP11N80C3 SPA11N80C3 is a power transistor with new revolutionary high voltage technology, ultra low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra low effective capacitance and improved transconductance
The Infineon SPP11N80C3 is a high‑voltage, ultra‑low‑gate‑charge power MOSFET presented in a P‑TO‑220‑3‑1 (or FullPAK) package. The datasheet provides maximum ratings, thermal characteristics, and detailed electrical parameters for designers.
Key sections include Maximum Ratings, Thermal Characteristics, Electrical Characteristics, Gate Charge data, and transient thermal impedance curves. Legal and mounting information are also supplied at the end of the document.