Infineon Manuals

Key facts

Manuals

162

Last added

2012-08-01

Latest Infineon manuals

• lnfineon BFS483 handbook(1)

  This document describes the features and characteristics of the BFS483 NPN Silicon RF Transistor. It is designed for low-noise, high-gain broadband amplifiers with collector currents ranging from 2 mA to 28 mA. It has an fT of 8 GHz and a gain of 1.2 dB at 900 MHz. The transistor package contains two galvanically isolated transistors.

• lnfineon BFS483 handbook

  The BFS482 is a low-noise, high-gain broadband amplifier that integrates two (galvanic) internal transistors and is suitable for collector currents from 0.2 mA to 20 mA.

• lnfineon BFS481 handbook

  BFS481 is a NPN Silicon RF Transistor for low-noise, high-gain broadband amplifier at collector currents from 0.5 mA to 12 mA.

• lnfineon BFS480 handbook

  BFS480 is an NPN silicon RF transistor designed for low noise, low-power amplifiers in mobile communication systems such as pagers and cordless telephones. It operates at collector currents ranging from 0.2 mA to 8 mA, with a transition frequency (fT) of 7 GHz and a gain (F) of 1.5 dB at 900 MHz. The package contains two internally isolated transistors.

• lnfineon BFS466L6 NPN Silicon RF TWIN Transistor handbook

  BFS466L6 is a dual NPN Silicon RF transistor, suitable for low voltage/low current applications. It is ideal for VCO modules and low noise amplifiers.

• lnfineon BFS460L6 handbook

  BFS460L6 is a dual NPN silicon RF transistor with a high fT of 22 GHz, suitable for low voltage/low current applications, ideal for VCO modules and low noise amplifiers, a low noise figure of 1.1 dB at 1.8 GHz, the world's smallest SMD 6-pin leadless package, excellent ESD performance, and two integrated transistors (TR1, TR2: die as BFR460L3)

• lnfineon BFS380L6 handbook

  BFS380L6 is an NPN silicon RF transistor with high current capability and low noise figure, suitable for wide dynamic range applications. The transistor operates at low voltage and is ideal for low phase noise oscillators up to 3.5 GHz.

• lnfineon BFS17W handbook

  BFS17W is a NPN silicon RF transistor for broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA

• lnfineon BFS17S handbook

  BFS17S is a NPN silicon RF transistor for broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA

• lnfineon BFS17P handbook

  BFS17P is a NPN Silicon RF Transistor for broadband amplifiers up to 1GHz at collector currents from 1 mA to 20 mA.

• lnfineon BAT14... handbook

  BAT14-03W is a low noise and low barrier type silicon Schottky diode for DBS mixer application, with a maximum reverse voltage of 4V and a maximum operating temperature of 150°C.

• lnfineon Silicon N_Channel MOSFET Tetrode BF998... handbook

  This document describes the features and characteristics of the BF998 silicon N-channel MOSFET tetrode. It is a short-channel transistor with a high S/C quality factor, suitable for low-noise, gain-controlled input stages up to 1 GHz. It is an electrostatic discharge sensitive device, and handling precautions must be observed.

• lnfineon BGA427 Si-MMIC-Amplifier in SIEGET 25-Technologie handbook

  BGA427 is a Si-MMIC-Amplifier from SIEGET with 50 ohm gain block, unconditional stability, 2 V to 5 V typical voltage, 25 mA current, 1.8 GHz gain of 18.5 dB, 1.8 GHz reverse isolation of 35 dB, 150 mW total power dissipation and 120 °C junction temperature.

• lnfineon BUZ 73AL handbook

  BUZ 73AL is a voltage adjustable power transistor manufactured by Infineon, with a maximum voltage of 200V, a maximum current of 5.5A, and a typical on-resistance of 0.6Ω. It is packaged in a TO-220AB package.

• lnfineon BUZ 344 handbook

  BUZ344 is an N channel enhancement mode avalanche-rated power transistor with a maximum continuous current of 50A and a maximum on-resistance of 0.035 ohms.