This document describes the features and characteristics of the SIEGET�25 BFP420F NPN Silicon RF Transistor, which is suitable for high gain low noise amplifiers. It has a small package size, low noise figure, and high reliability.
The BFP420F is an NPN silicon RF transistor designed for high‑gain, low‑noise amplifier applications. It features a compact TSFP‑4 package (1.4 × 0.8 × 0.59 mm) with gold metallization for reliability and operates up to 25 GHz transition frequency.
The document provides maximum ratings, electrical characteristics, and detailed SPICE model parameters for circuit simulation. It also includes guidelines for package modeling and non‑linear simulation at frequencies above 100 MHz.
| Package dimensions | 1.4 x 0.8 x 0.59 mm |
|---|---|
| Noise figure (F) | 1.1 dB at 1.8 GHz |
| Gain | 20 dB at 1.8 GHz |
| Transition frequency (fT) | 25 GHz |
| Collector‑emitter voltage (VCEO) | 4.5 V |
| Collector current (IC) | 35 mA |
| Base current (IB) | 3 mA |
| Total power dissipation (Ptot) | 160 mW |
| Junction temperature max | 150 °C |
| Storage temperature range | -65 °C … 150 °C |
The transistor’s transition frequency (fT) is 25 GHz.
The collector‑emitter breakdown voltage is rated at 4.5 V.
The noise figure is 1.1 dB at 1.8 GHz.