Key facts
- Brand
- Infineon
- Model
- BFP420
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-05
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Infineon BFP420F NPN Silicon RF Transistor Datasheet
The BFP420F is an NPN silicon RF transistor designed for high‑gain, low‑noise amplifier applications. It features a compact TSFP‑4 package (1.4 × 0.8 × 0.59 mm) with gold metallization for reliability and operates up to 25 GHz transition frequency.
The document provides maximum ratings, electrical characteristics, and detailed SPICE model parameters for circuit simulation. It also includes guidelines for package modeling and non‑linear simulation at frequencies above 100 MHz.
Infineon BFP420 specifications
| Package dimensions | 1.4 x 0.8 x 0.59 mm |
|---|---|
| Noise figure (F) | 1.1 dB at 1.8 GHz |
| Gain | 20 dB at 1.8 GHz |
| Transition frequency (fT) | 25 GHz |
| Collector‑emitter voltage (VCEO) | 4.5 V |
| Collector current (IC) | 35 mA |
| Base current (IB) | 3 mA |
| Total power dissipation (Ptot) | 160 mW |
| Junction temperature max | 150 °C |
| Storage temperature range | -65 °C … 150 °C |
Source: Infineon BFP420F NPN Silicon RF Transistor Datasheet
All Infineon BFP420 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the transition frequency of the BFP420F?
The transistor’s transition frequency (fT) is 25 GHz.
What is the maximum collector‑emitter voltage rating?
The collector‑emitter breakdown voltage is rated at 4.5 V.
What is the maximum collector‑emitter voltage for the BFP420?
The maximum collector‑emitter voltage is 4.5 V.
What is the transition frequency of the BFP420 transistor?
The transition frequency (fT) is 25 GHz.