The BFP420 SIEGET is an NPN Silicon RF transistor suitable for high gain low noise amplifiers and oscillators up to 10 GHz. It has a noise figure of 1.1 dB and a gain of 21 dB at 1.8 GHz. The transition frequency is 25 GHz, and it features gold metallization for high reliability.
The BFP420 is an NPN silicon RF transistor from Infineon's SIEGET®25 family, intended for high‑gain low‑noise amplifiers and oscillators up to 10 GHz. It features a transition frequency of 25 GHz, low noise figure (1.1 dB at 1.8 GHz), and gold metallization for reliability.
The datasheet lists maximum ratings such as VCEO = 4.5 V, collector current = 35 mA, and total power dissipation = 160 mW, as well as detailed SPICE parameters for circuit simulation. Package information, thermal resistance, and noise/ gain curves are also provided for design engineers.
| Collector‑emitter voltage (VCEO) | 4.5 V |
|---|---|
| Collector current (Ic) | 35 mA |
| Transition frequency (fT) | 25 GHz |
| Noise figure (F) at 1.8 GHz | 1.1 dB |
| Total power dissipation (Ptot) | 160 mW |
The maximum collector‑emitter voltage is 4.5 V.
The transition frequency (fT) is 25 GHz.
The noise figure is 1.1 dB at 1.8 GHz.
The transistor can handle up to 35 mA of collector current.