This datasheet introduces the features of K9F1G08U0A and K9F1G08Q0A NAND flash memory
The document describes Samsung's 128M × 8 Bit NAND flash memory devices K9F1G08Q0A (1.8 V) and K9F1G08U0A (3.3 V). It lists features such as automatic program/erase, cache programming, copy‑back operation, and various package options (48‑pin TSOP and WSOP). The product introduction explains the memory organization, page and block structure, and the multiplexed I/O scheme.
Electrical characteristics, pin descriptions, command sets, absolute maximum ratings and recommended operating conditions are detailed. Timing diagrams for ready/busy signaling and power‑up protection are included, along with guidance for pull‑up resistor selection and data‑protection circuitry.
| Memory capacity | 128M × 8 Bit |
|---|---|
| Supply voltage (1.8 V device) | 1.70 V ~ 1.95 V |
| Supply voltage (3.3 V device) | 2.7 V ~ 3.6 V |
| Page size | 2 KB |
| Page program size | 2 KB + 64 B |
| Block erase size | 128 KB + 4 KB |
| Typical program time | 300 µs |
| Typical block erase time | 2 ms |
| Endurance | 100 k cycles |
| Data retention | 10 years |
| Package pin count (TSOP) | 48 pins |
The K9F1G08Q0A operates from 1.70 V to 1.95 V.
A page program typically takes 300 µs.
The TSOP package uses 48 pins.