This document describes the specifications and features of Samsung Electronics' 16M x 8-bit NAND flash memory. The document provides detailed technical parameters of the K9F2808U0B and K9F2808Q0B series products, including operating current, programming and erase time, etc. The revision history of the product is also provided.
The K9F2808Q0B is a 16 M‑byte (16,777,216) × 8‑bit NAND flash memory offered by Samsung. It is available in a 1.8 V (1.7‑1.9 V) TBGA package and provides features such as automatic program/erase, 100 K program/erase cycles endurance, and 10‑year data retention.
This datasheet includes revision history, electrical characteristics, pin configurations for TSOP1, WSOP1 and TBGA packages, functional block diagrams, and timing specifications such as typical program time (300 µs) and read cycle time (70 ns). It also describes the Ready/Busy output behavior and power‑up protection circuitry.
| Memory Organization | 16M x 8 Bit NAND Flash |
|---|---|
| Page Size | 528 Bytes |
| Block Size | 16 KB + 512 B |
| Typical Program Time (K9F2808Q0B) | 300 µs |
| Typical Erase Time | 2 ms |
| Read Cycle Time (K9F2808Q0B) | 70 ns |
| Endurance | 100 K program/erase cycles |
| Data Retention | 10 Years |
The typical program time is 300 µs.
The device is rated for 100 K program/erase cycles.
Each page is 528 bytes.