The document provides technical information and features of three models of Samsung flash memory products: K9F1208R0C, K9F1208U0C, and K9F1208B0C.
The K9F1208X0C is a 64M × 8‑bit NAND flash memory offered by Samsung in 1.8 V, 2.7 V and 3.3 V versions. It targets solid‑state storage applications and includes features such as automatic program/erase, hardware data protection, and a unique ID for copyright protection.
The document contains sections on features, product list, pin configurations for TSOP and FBGA packages, pin descriptions, functional block diagrams, array organization, power‑up sequence, and timing guides for write‑protect (WP) operations. Technical specifications such as voltage ranges, page size, program time, endurance, and data retention are listed.
| Vcc range (1.8 V device) | 1.65 V ~ 1.95 V |
|---|---|
| Vcc range (2.7 V device) | 2.5 V ~ 2.9 V |
| Vcc range (3.3 V device) | 2.7 V ~ 3.6 V |
| Memory cell array organization | (64M + 2M) × 8 bits |
| Page size | 528 Bytes (612 + 16) |
| Block size | 16 KB + 512 B |
| Typical program time | 200 µs per page |
| Typical block erase time | 2 ms |
| Endurance | 100 k program/erase cycles |
| Data retention | 10 years |
The 1.8 V version operates at 1.65‑1.95 V, the 2.7 V version at 2.5‑2.9 V, and the 3.3 V version at 2.7‑3.6 V.
Typical program time is 200 µs per 528‑byte page.
It is rated for 100 k program/erase cycles.
The device retains data for 10 years.