The document details the Samsung 256Mb E-die SDRAM model, frequency, interface, package, etc.
The Samsung 256 Mb E‑die SDRAM is offered in three configurations—64 M × 4, 32 M × 8 and 16 M × 16—fabricated with high‑performance CMOS technology. It supports JEDEC‑standard 3.3 V operation, LVTTL‑compatible interfaces, and provides four banks with programmable burst lengths and latencies.
The document details absolute maximum ratings, recommended operating conditions, pin configuration for the 54‑pin TSOP(II) package, timing parameters, and output drive characteristics. Electrical specifications such as supply voltage range, operating currents, and AC characteristics are provided for design verification.