Samsung SDRAM 64Mb H-die (x4, x8, x16) Datasheet

K4S640432H/K4S640832H/K4S641632H is a 64Mb H-die CMOS SDRAM chip produced by Samsung Electronics.


Samsung SDRAM 64Mb H-die (x4, x8, x16) Datasheet - cover page
Brand
Samsung
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
14
File format
PDF
File size
161 KB
Published
01 April, 2012
Updated
30 September, 2023
Model
X16
MD5 checksum
33159453D613A6A1AAF66447328CE4FB

About this manual

This datasheet provides detailed information on Samsung's 64 Mb H‑die CMOS SDRAM devices, covering features, organization, package dimensions, pin configuration, and electrical characteristics. It includes ordering information for the K4S640432H, K4S640832H and K4S641632H part numbers.

Key sections describe absolute maximum ratings, recommended operating conditions, capacitance values, and timing parameters, enabling designers to integrate the memory correctly into high‑performance systems.

What's inside

  • Features
  • General Description
  • Ordering Information
  • Package Physical Dimension
  • Functional Block Diagram
  • Pin Configuration
  • Absolute Maximum Ratings
  • DC Operating Conditions
  • DC Characteristics
  • Simplified Truth Table

Specifications

Supply voltage (VDD, VDDQ)3.0 V min – 3.6 V max (typ 3.3 V)
Maximum operating frequency133 MHz (CL=3) for 16 Mb × 4 and 8 Mb × 8 parts
Package type54‑pin TSOP‑II
Storage temperature range-55 °C to +150 °C
Power dissipation1 W
Absolute maximum pin voltage-10 V to +46 V

Frequently asked questions

What is the recommended supply voltage for the SDRAM?

The device is specified for a supply voltage of 3.0 V minimum, 3.3 V typical, and 3.6 V maximum.

What temperature range can the SDRAM be stored at?

The SDRAM can be stored from –55 °C up to +150 °C.

What is the maximum operating frequency for the 16 Mb × 4 part?

The 16 Mb × 4 version (K4S640432H) operates up to 133 MHz with CL = 3.

What package does this SDRAM use?

It is supplied in a 54‑pin TSOP‑II surface‑mount package.

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