The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip- based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is tak- en to ensure a very good dv/dt capability for the most demanding applications. Such series comple- ments ST full range of high voltage MOSFETs in- cluding revolutionary MDmesh™ products.
The STP7NK40Z series are N‑channel 400 V, 0.85 mΩ, 5.4 A SuperMESH™ Power MOSFETs offered in TO‑220, TO‑220FP, DPAK and I‑PAK packages. The devices feature Zener‑protected gate, high dv/dt capability, low gate charge and avalanche robustness for demanding high‑current, high‑speed switching applications such as offline power supplies, adapters and lighting.
The datasheet provides absolute maximum ratings, thermal data, avalanche characteristics, electrical parameters, switching performance, mechanical dimensions and packaging information, along with recommended test circuits for evaluating device behavior.
| Drain‑source voltage (VDS) | 400 V |
|---|---|
| Avalanche energy (EAS) | 130 mJ (typ) |
| Operating junction temperature range | -55 °C to 150 °C |
The device is rated for a maximum drain‑source voltage of 400 V.