This document is about the preliminary data of STP60NS04Z N - CHANNEL CLAMPED 10mΩ - 60A - TO-220 FULLY PROTECTED MESH OVERLAY MOSFET. The product features low on-resistance, high voltage clamping, low capacitance, and gate charge, making it suitable for applications such as ABS, SOLENOID DRIVERS, MOTOR CONTROL, and DC-DC CONVERTERS.
The STP60NS04Z is a fully clamped, 60 A, TO‑220 MOSFET featuring a mesh overlay process for high ruggedness, suitable for automotive and other harsh environments. The document provides detailed electrical, thermal and mechanical specifications, as well as application guidance.
Key sections include absolute maximum ratings, thermal resistance values, avalanche characteristics, electrical characteristics (static and dynamic), switching performance, and mechanical dimensions. Legal disclaimer and company information are also included.
| Continuous Drain Current (25 °C) | 60 A |
|---|---|
| Continuous Drain Current (100 °C) | 42 A |
| Pulsed Drain Current | 240 A |
| Total Power Dissipation (25 °C) | 140 W |
| Junction‑to‑Case Thermal Resistance (max) | 1.07 °C/W |
| Gate Threshold Voltage (typical) | 1.7 V – 4.2 V |
| Maximum Junction Temperature | 175 °C |
| Storage Temperature Range | -65 °C to 175 °C |
The maximum continuous drain current at 25 °C is 60 A.
The device is rated for a maximum junction temperature of 175 °C.
The total power dissipation at 25 °C is specified as 140 W.