This document describes the features and characteristics of the STP60NS04Z N-channel clamped MOSFET, including low on-resistance, 100% avalanche tested, low capacitance and gate charge, and a maximum junction temperature of 175℃. This product is produced using the latest Mesh Overlay process and is suitable for automotive environments and other applications requiring extra ruggedness.
The STP60NS04Z is a fully clamped N‑channel MOSFET with a 60 A continuous drain current and a rugged Mesh Overlay™ process, designed for harsh automotive and industrial environments. It offers low gate charge, low capacitance, and high avalanche capability, making it suitable for motor control, solenoid drivers, and DC‑DC converters.
The datasheet lists absolute maximum ratings, thermal resistance values, avalanche characteristics, detailed electrical parameters, switching behavior, and mechanical dimensions of the TO‑220 package, along with typical application circuits and test data.
| Continuous Drain Current (25 °C) | 60 A |
|---|---|
| Continuous Drain Current (100 °C) | 42 A |
| Total Dissipation (25 °C) | 140 W |
| Thermal Resistance Junction‑Case (max) | 1.07 °C/W |
| Avalanche Current (repetitive) | 60 A |
| Gate Threshold Voltage (typical) | 1.7‑4.2 V |
| On‑Resistance (typical) | 11‑15 mΩ |
| Total Gate Charge (typical) | 70‑100 nC |
| Storage Temperature Range | -65 °C to 175 °C |
| Package Type | TO‑220 |
The device can handle up to 60 A continuous drain current at 25 °C.
The MOSFET is supplied in a TO‑220 package.
The maximum operating junction temperature is 175 °C.
Typical gate threshold voltage is between 1.7 V and 4.2 V.