STD7NM50N-1,STF7NM50N and STP7NM50N are second generation MDmesh™ Power MOSFET with 100% avalanche tested, low input capacitance and gate charge, low gate input resistance, suitable for the most demanding high efficiency converters application.
The STD7NM50N series comprises N‑channel power MOSFETs with a 500 V drain‑source rating and up to 5 A continuous current. These devices are offered in TO‑220, DPAK, TO‑220FP, IPAK and tube packages and feature low input capacitance, low gate charge, and a robust avalanche rating.
The datasheet provides absolute maximum ratings, detailed electrical characteristics, switching times, and package mechanical data. It also includes test circuit recommendations and a revision history for the document.
| Drain‑source voltage (VDS) | 500 V |
|---|---|
| Gate‑source voltage (VGS) | +25 V |
| Continuous drain current (ID) at 25 °C | 5 A |
| Pulsed drain current (ID,pulse) | 20 A |
| Total power dissipation (PD) at 25 °C | 45 W |
| Thermal resistance junction‑case (RθJC) | 2.78 °C/W |
| Input capacitance (Ciss) | 400 pF |
The device is rated for a maximum drain‑source voltage of 500 V.
The continuous drain current is specified as 5 A at a junction temperature of 25 °C.
The input capacitance (Ciss) is 400 pF.