This document introduces the STB60NF06L, STP60NF06L, and STP60NF06LFP series of N-CHANNEL 60V - 0.012Ω - 60A MOSFETs. These products have low input capacitance and gate charge, making them suitable for high-efficiency, high-frequency isolated DC-DC converters and applications with low gate drive requirements.
The STB60NFO6L, STP60NFO6L and STP60NFO6LFP are N‑channel Power MOSFETs realised with STMicroelectronics' STripFET process. They are designed for low input capacitance and gate charge, making them suitable for high‑efficiency isolated DC‑DC converters in telecom and computer applications, as well as other low‑gate‑charge driven circuits.
Key specifications include a 60 V drain‑source rating, 60 A continuous drain current at 25 °C, 240 A pulsed current, typical on‑resistance of 0.012 Ω, total gate charge of 66 nC and an input capacitance of 2000 pF. The devices are offered in TO‑220, TO‑220FP and DPAK packages and are supplied in tape‑and‑reel form.
| Drain‑source voltage (VDS) | 60 V |
|---|---|
| Input capacitance (Ciss) | 2000 pF |
| Thermal resistance junction‑case (RθJC) | 1.36 °C/W |
| Package types | TO‑220, TO‑220FP, DPAK |
The devices are rated for a maximum drain‑source voltage of 60 V.
The MOSFETs are offered in TO‑220, TO‑220FP and DPAK packages.