This document describes the features and characteristics of STB60NF06L, STP60NF06L, and STP60NF06LFP, which are N-channel 60V power MOSFETs. These products are realized using STMicroelectronics' unique STripFET process, which minimizes input capacitance and gate charge. They have exceptional dv/dt capability, have undergone 100% avalanche testing, and are suitable for advanced high-efficiency isolated DC-DC converters and applications with low gate charge drive requirements.
This datasheet provides the electrical ratings, characteristics and mechanical data for the STB60NFO6L, STP60NFO6L and STP60NFO6LFP N‑channel 60 V Power MOSFETs. The devices are offered in DPAK, TO‑220 and TO‑220FP packages and are suited for high‑efficiency switching applications.
Key sections include absolute maximum ratings, detailed on‑state and switching parameters, package dimensions and revision history. The document also lists part numbers, marking and ordering information.
| Drain‑source voltage (Vds) | 60 V |
|---|---|
| Drain‑gate voltage (Vdg) | 60 V |
| Gate‑source voltage (Vgs) | +15 V |
| Continuous drain current at 25 °C (Id) | 60 A |
| Continuous drain current at 100 °C (Id) | 42 A |
| Pulsed drain current | 240 A |
| Total power dissipation (Pd) | 110 W |
The maximum continuous drain current at 25 °C is 60 A.
The STP60NFO6LFP is supplied in a TO‑220FP tube package.
All three devices are rated for a maximum drain‑source voltage of 60 V.
The gate‑source voltage rating is +15 V.