This document describes the technical characteristics of the STP60NS04ZB N-CHANNEL CLAMPED 10mΩ - 60A TO-220 FULLY PROTECTED MESH OVERLAY™ MOSFET dated 1/8 November 2002. The product is produced using advanced Mesh Overlay technology and has additional clamping capabilities, making it suitable for applications in harsh environments such as automotive.
The STP60NS04ZB is a fully‑clamped N‑channel MOSFET designed for harsh automotive and industrial environments. It features a low on‑resistance, high avalanche capability, and a maximum junction temperature of 175 °C.
The document provides absolute maximum ratings, thermal resistance values, detailed electrical characteristics such as drain current, gate charge, and switching times, as well as mechanical dimensions and test circuit diagrams. It also includes a disclaimer and copyright information from STMicroelectronics.
| Continuous Drain Current (25 °C) | 60 A |
|---|---|
| Continuous Drain Current (100 °C) | 42 A |
| Total Power Dissipation (25 °C) | 150 W |
| Maximum Junction Temperature | 175 °C |
| Typical On‑Resistance (Rds(on)) | 0.015 Ω |
| Gate Threshold Voltage (typical) | 3 V |
| Avalanche Current | 60 A |
| Single‑Pulse Avalanche Energy | 400 mJ |
The device can conduct up to 60 A continuously at a case temperature of 25 °C.
The MOSFET is rated for a maximum junction temperature of 175 °C.
Typical on‑resistance is less than 0.015 Ω at the rated current.
It can absorb up to 400 mJ of avalanche energy in a single pulse.