STP60NF06 is a N-channel MOSFET produced by STMicroelectronics. It has a maximum on-resistance of 0.014Ω and a maximum current of 60A. The product is manufactured using the STripFET process and has the advantages of small input capacitance, fast switching speed, and low gate charge. It is suitable for applications such as high-efficiency DC-DC converters, UPS and motor control.
The STP60NF06 is an N‑channel power MOSFET designed for low gate charge and input capacitance, making it suitable for high‑efficiency DC‑DC converters, UPS, motor control and automotive applications. The document provides detailed electrical, thermal and mechanical characteristics, as well as avalanche and switching performance data.
Key sections include a product description, absolute maximum ratings, electrical characteristics (on‑resistance, capacitances, gate charge), thermal data, mechanical dimensions for TO‑220 and TO‑220FP packages, and test circuit diagrams for switching and inductive load performance.
| Drain‑Source Voltage (VDS) | 60 V |
|---|---|
| Typical On‑Resistance (RDS(on)) | 0.014 Ω |
| Thermal Resistance Junction‑Ambient | 62.5 °C/W |
| Input Capacitance (Ciss) | 1810 pF |
| Output Capacitance (Coss) | 360 pF |
| Avalanche Current (IAvalanche) | 30 A |
The device is rated for a maximum drain‑source voltage of 60 V.
The typical RDS(on) is 0.014 Ω.