This document describes the features and characteristics of an N-channel power MOSFET product, including the use of second generation MDmesh™ technology, low input capacitance and gate charge, and low gate input resistance. The product is suitable for switching applications in high-efficiency converters.
The STD7NM50N series comprises N‑channel 500 V Power MOSFETs offered in TO‑220, TO‑220FP, IPAK, and DPAK packages. The devices feature low on‑resistance, low gate charge, and are designed for high‑efficiency converter applications.
The document provides absolute maximum ratings, thermal data, avalanche characteristics, electrical characteristics (including on/off states, capacitances, and switching times), as well as mechanical dimensions for each package type. Revision history and ordering information are also included.
| Drain‑source voltage (VDS) | 500 V |
|---|---|
| Gate‑source voltage (VGS) | +25 V |
| Continuous drain current (ID) at 25 °C | 5 A |
| Pulsed drain current (ID,pulse) | 20 A |
| Total dissipation (PD) | 45 W |
| Thermal resistance junction‑case (RθJC) | 2.78 °C/W |
| Avalanche current (IAval) | 2 A |
| Input capacitance (Ciss) | 400 pF |
| Total gate charge (Qg) | 12 nC |
The device can withstand up to 500 V drain‑source voltage.
The MOSFETs are offered in TO‑220, TO‑220FP, IPAK, and DPAK packages.
The continuous drain current is rated at 5 A at a junction temperature of 25 °C.
The typical input capacitance (Ciss) is 400 pF.