STMicroelectronics STB60NF10 STP60NF10 Power MOSFET Datasheet

This document introduces a N-channel power MOSFET product with extremely high dv/dt capability and low input capacitance and gate charge. It is suitable for high-efficiency DC/DC converters, industrial and lighting equipment, and motor control applications.


STMicroelectronics STB60NF10 STP60NF10 Power MOSFET Datasheet - cover page
Brand
STMicroelectronics
Category
Power Management
Document type
Datasheet
Language
English
Pages
10
File format
PDF
File size
237 KB
Published
01 April, 2012
Updated
29 September, 2023
MD5 checksum
700B2DE05F97F45E97FF92E17C0EFC5F

About this manual

The STB60NF10 and STP60NF10 are N‑channel 100 V power MOSFETs offered in D2PAK (TO‑263) and TO‑220 packages. They feature low on‑resistance (typical 0.019 Ω), high current capability (80 A continuous) and fast switching suitable for high‑efficiency DC‑DC converters and motor control.

The document provides absolute maximum ratings, thermal characteristics, electrical parameters, switching times, mechanical dimensions and ordering information, along with a revision history and legal disclaimer.

What's inside

  • General Features
  • Description
  • Applications
  • Absolute Maximum Ratings
  • Thermal Data
  • Electrical Characteristics
  • Switching On/Off
  • Source‑Drain Diode
  • Mechanical Data
  • Revision History

Specifications

Continuous Drain Current (ID)80 A
Typical On‑Resistance (RDS(on))0.019 Ω
Thermal Resistance Junction‑Case (RθJC)0.5 °C/W

Frequently asked questions

What is the maximum continuous drain current for these MOSFETs?

The maximum continuous drain current is 80 A at 25 °C.

What is the typical on‑resistance of the devices?

The typical on‑resistance is 0.019 Ω.

Download PDF (237 KB)

More STMicroelectronics Manuals


View all STMicroelectronics manuals →