MGF1952A is a microwave power MES FET device produced by Mitsubishi Electric. It is used in S to Ku band power amplifiers.
The MGF1952A is a microwave power MES FET in a lead‑less ceramic package, intended for S‑ to Ku‑band power amplifiers. The device offers high gain and high P1dB performance while minimizing parasitic losses.
Key specifications include a typical gain of 7.0 dB at 12 GHz, P1dB of 17 dBm, a maximum drain current of 240 mA, and a total power dissipation of 600 mW. The datasheet also lists absolute maximum ratings, detailed S‑parameter data, and safety design recommendations for reliable circuit implementation.
| Typical gain (Glp) | 7.0 dB @ 12 GHz |
|---|---|
| Typical output power at 1 dB compression (P1dB) | 17 dBm @ 12 GHz |
| Maximum drain current | 240 mA |
| Total power dissipation | 600 mW |
| Channel temperature rating | 125 °C |
| Storage temperature range | -65 °C to +125 °C |
The typical gain is 7.0 dB at 12 GHz.
The device can handle up to 240 mA of drain current.
Designs should use non‑flammable materials and incorporate redundancy to prevent malfunctions.