MGF0916A is a L&S BAND / 0.2W SMD non - matched product with features of high output power, high power gain and high power added efficiency.
The MGF0916A is a high‑power GaAs field‑effect transistor designed for use in UHF band power amplifiers. It features a typical output power of 23 dBm at 1.9 GHz, a gain of 19 dB, and a power‑added efficiency of about 30 %.
The datasheet provides absolute maximum ratings, electrical characteristics, typical S‑parameter curves, and recommended bias conditions (VDS = 6 V, IDS = 100 mA, RG = 1 kΩ). Safety and export‑control notices are also included.