The MGF4851A is a power InGaAs HEMT designed by Mitsubishi Electric for use in S to K band amplifiers. It features high gain and high P1dB, with typical values of 11 dB and 14.5 dBm, respectively.
The MGF4851A Power GaAs HEMT is designed for S‑ to K‑band low‑noise amplifiers. It comes in a lead‑less ceramic package that minimizes parasitic losses and provides typical gain of 11 dB and P1dB of 14.5 dBm at 12 GHz. Recommended bias is VDS = 2.5 V with ID = 25 mA.
The datasheet lists absolute maximum ratings, electrical characteristics, and S‑parameter measurements from 1 GHz to 15 GHz. It also includes ordering information, RoHS compliance details, and extensive safety and legal notices from Mitsubishi Electric.
| Typical Gain (Glp) | 11 dB |
|---|---|
| Typical P1dB | 14.5 dBm |
| Gate‑to‑Drain Voltage (V_GDO) | 5 V |
| Gate‑to‑Source Voltage (V_GSO) | 5 V |
| Drain Current (I_DSS) | 25 mA |
| Total Power Dissipation (P_T) | 100 mW |
| Channel Temperature (T_j) | 125 °C |
| Storage Temperature | -65 to +125 °C |
| S‑Parameter Magnitude at 1 GHz (S21) | 0.988 |
| RoHS Compliance | Yes (letter “G” after lot marking) |
The recommended bias is VDS = 2.5 V and ID = 25 mA.
Yes, it is RoHS compliant; compliance is indicated by the letter “G” after the lot marking.
The absolute maximum gate‑to‑drain voltage is 5 V.
Typical gain (Glp) is 11 dB at 12 GHz.