The MGF2445A is a power GaAs FET with an N-channel schottky gate, designed for use in S to Ku band amplifiers.
The MGF2445A is a high‑power GaAs FET with an N‑channel Schottky gate, intended for S‑to‑Ku‑band power amplifiers. It delivers up to 32 dBm output power at 12 GHz and a linear gain of about 6 dB. Recommended bias conditions are Vds = 10 V and Ids = 450 mA.
The document includes absolute maximum ratings, electrical characteristics, typical performance curves, S‑parameters, and extensive safety warnings. It was published by Mitsubishi Electric Corporation in April 2011.
| Typical output power | 32.0 dBm @ 12 GHz |
|---|---|
| Typical linear power gain | 6.0 dB @ 12 GHz |
| Recommended bias voltage | Vds = 10 V |
| Recommended bias current | Ids = 450 mA |
| Maximum gate‑to‑drain voltage | 15 V |
| Maximum gate‑to‑source voltage | 15 V |
| Maximum drain current | 1500 mA |
| Power added efficiency | 20 % |
The typical output power is 32.0 dBm at 12 GHz.
Recommended bias is Vds = 10 V with a drain current of 450 mA.
The device can handle up to 1500 mA drain current.
The PAE is specified as 20 %.