MGF2415A is a GaAs FET with an N-channel Schottky gate, produced by Mitsubishi Electric Corporation. It is designed for use in S to Ku band amplifiers. Its features are: high output power, high linear power gain and high power added efficiency.
The MGF2415A is a high‑power GaAs FET designed for S‑ to Ku‑band power amplifiers. The datasheet provides key electrical characteristics, typical performance curves and recommended bias settings for designers.
Safety notices, absolute maximum ratings and detailed S‑parameter tables are included to aid circuit design and ensure reliable operation of the device.
| Typical output power (Po) | 27.5 dBm @ 14.5 GHz |
|---|---|
| Linear power gain (GLP) | 7.5 dB @ 14.5 GHz |
| Power added efficiency (PA.E.) | 29 % @ 14.5 GHz |
| Maximum drain current (ID) | 400 mA |
| Gate‑to‑drain voltage (Vgd) | 15 V |
| Gate‑to‑source voltage (Vgs) | 15 V |
| Recommended bias – Vds | 10 V |
| Recommended bias – Ids | 150 mA |
The typical output power is 27.5 dBm at 14.5 GHz.
Recommended bias is Vds = 10 V and Ids = 150 mA.
The device is rated for a maximum drain current of 400 mA.
The gate‑to‑drain voltage rating is 15 V.