MGF2407A is a N-channel schottky gate high power GaAs FET designed for use in S to Ku band amplifiers. This device features high output power, high linear gain and high power added efficiency.
The MGF2407A is a high‑power GaAs FET with an N‑channel Schottky gate, intended for S‑ to Ku‑band power amplifiers. The document provides key electrical parameters, typical performance curves, and recommended bias conditions.
Safety warnings, storage limits, and export control information are also included, along with Mitsubishi Electric’s disclaimer and contact guidance for the latest product data.
| Typical Output Power (Po) | 24.5 dBm @ 14.5 GHz |
|---|---|
| Linear Power Gain (GLP) | 8.0 dB (typ) |
| Power Added Efficiency (PAE) | 30 % (typ) |
| Maximum Drain Current (ID) | 200 mA |
| Gate‑to‑Drain Voltage (Vgdo) | 15 V |
| Gate‑to‑Source Voltage (Vgso) | 15 V |
| Reverse Gate Current (IGR) | -0.6 mA |
| Forward Gate Current (IGE) | 25 mA |
| Total Power Dissipation (P11) | 15 W |
| Storage Temperature Range | 65 °C to +175 °C |
The typical output power is 24.5 dBm at 14.5 GHz.
The maximum gate‑to‑drain voltage rating is 15 V.
The typical power added efficiency is 30 %.
The device should be stored between 65 °C and +175 °C.