MGF1953A is a power MESFET designed by Mitsubishi Electric for use in S to Ku band power amplifiers.
The MGF1953A is a lead‑less ceramic package GaAs power MES FET designed for S‑ to Ku‑band power amplifiers. Its high gain and high P1dB make it suitable for low‑noise amplifier applications.
The document lists absolute maximum ratings, recommended bias conditions, RoHS compliance, and S‑parameter data, and includes safety and export‑control notices for designers.
| Gate to drain voltage (VGDO) | -8 V |
|---|---|
| Gate to source voltage (VGSO) | -8 V |
| Drain current (ID) | 400 mA |
| Total power dissipation (PT) | 4 W |
| Channel temperature (Toh) | 125 °C |
| Storage temperature (Tstg) | -65 to +125 °C |
| Recommended bias VDS | 4 V |
| Recommended bias ID | 100 mA |
The recommended bias is VDS = 4 V and ID = 100 mA.
Yes, the MGF1953A is RoHS compliant, indicated by the letter “G” after the lot marking.
The absolute maximum drain current rating is 400 mA.