MGF0912A is a high-power GaAs FET designed for use in L/S band amplifiers. It features high output power, high power gain, and high power added efficiency. It is suitable for L/S band power amplifiers.
The MGF0912A is a high‑power GaAs FET designed for use in L‑band (L&S) power amplifiers. It features a Schottky‑gate N‑channel structure, a typical output power of 41.5 dBm at 1.9 GHz, and a typical gain of 10.5 dB.
The datasheet lists absolute maximum ratings, recommended bias conditions, electrical characteristics, and typical S‑parameter data. It also includes safety and export‑control notices for customers integrating the device into their designs.
| Output Power (typical) | 41.5 dBm @1.9 GHz, Pin=33 dBm |
|---|---|
| Gain (typical) | 10.5 dB @1.9 GHz |
| Power Added Efficiency (typical) | 38 % @1.9 GHz, Pin=33 dBm |
| Drain Current (max) | 10 A |
| Gate‑to‑Drain Voltage (max) | -15 V |
| Gate‑to‑Source Voltage (max) | -15 V |
| Total Power Dissipation | 53.6 W |
| Storage Temperature Range | -65 °C to +175 °C |
The recommended bias is Vds = 10 V, Ids = 2.6 A, and Rg = 50 Ω.
The device can handle a maximum drain current of 10 A.
The publication date is April 2011.