MGF0904A is a GaAs FET with an N-channel schottky gate, designed for use in UHF band amplifiers. It features high output power (Po=28.0dBm), high power gain (Gp=13.0dB) and high power added efficiency (P.A.E =40%).
The MGF0904A is a high‑power GaAs field‑effect transistor intended for L & S‑band (0.6 W) applications. It features a typical output power of 28 dBm at 1.65 GHz, a gain of 13 dB, and a power‑added efficiency of 40 %.
Designed for UHF‑band power amplifiers, the device includes recommended bias conditions and electrical ratings such as 17 V gate‑to‑drain and gate‑to‑source limits, 800 mA drain current, and 3.75 W total dissipation. Safety and usage notices are provided by Mitsubishi Electric Corporation.
| Typical Output Power | 28.0 dBm @ 1.65 GHz, Pin=15 dBm |
|---|---|
| Typical Gain | 13.0 dB |
| Typical Power‑Added Efficiency | 40 % (typ.) |
| Gate‑to‑Drain Voltage (V_GD) | Maximum 17 V |
| Gate‑to‑Source Voltage (V_GS) | Maximum 17 V |
| Drain Current (I_D) | Maximum 800 mA |
| Reverse Gate Current (I_GR) | Maximum -2.5 mA |
| Forward Gate Current (I_GF) | Maximum 5.4 mA |
| Total Power Dissipation | 3.75 W |
| Storage Temperature Range | -65 °C to +175 °C |
The typical output power is 28 dBm when driven with a 15 dBm input at 1.65 GHz.
Both the gate‑to‑drain and gate‑to‑source voltages are limited to 17 V.
The device can handle up to 800 mA of drain current.
Typical PAE is specified as 40 % under the given test conditions.