The MGF1954A is a power MES FET from Mitsubishi Electric that is designed for use in S to Ku band power amplifiers. This device has high gain and high P1dB, with typical values of 5.0dB and 23dBm, respectively. It is suitable for use in S to Ku band low noise amplifiers.
The MGF1954A is a lead‑less ceramic GaAs power MES FET designed for S‑ to Ku‑band power amplifiers. It offers high gain and high P1dB performance, with a typical gain of 5.0 dB and P1dB of 23 dBm at 12 GHz.
The document provides absolute maximum ratings, electrical characteristics, typical performance curves, S‑parameter data, ordering information and safety/legal notices. It also confirms RoHS compliance and includes recommended bias conditions for optimal operation.
| Gate‑to‑drain voltage (V_GDO) | -8 V |
|---|---|
| Gate‑to‑source voltage (V_GSO) | -8 V |
| Drain current (I_D) | 400 mA |
| Total power dissipation (P_T) | 4 W |
| Linear power gain (GLP) | 5.0 dB (typ.) |
| 1 dB compression point (P1dB) | 23 dBm (typ.) |
| Recommended bias voltage (V_DS) | 6 V |
| Recommended bias current (I_D) | 100 mA |
| RoHS compliance | Yes |
The recommended bias is VDS = 6 V with a drain current ID = 100 mA.
Yes, the MGF1954A is a RoHS‑compliant product.
The absolute maximum drain current rating is 400 mA.
The device can tolerate a gate‑to‑drain voltage of up to –8 V.