The MGF2430A is a high-power GaAs FET produced by Mitsubishi Electric Corporation. It is designed for use in S to Ku band amplifiers. The MGF2430A features high output power, high linear power gain, and high power added efficiency.
The MGF2430A is a high‑power GaAs FET with an N‑channel Schottky gate, intended for S‑ to Ku‑band power amplifiers. The document provides key electrical characteristics, recommended bias conditions, and typical performance curves.
Safety notes, absolute maximum ratings, and detailed S‑parameter data are included, along with manufacturer contact information and export‑control notices.
| Typical Output Power (Po) | 30.5 dBm @ 14.5 GHz |
|---|---|
| Linear Power Gain (GLP) | 6.5 dB @ 14.5 GHz |
| Power Added Efficiency (PA.E.) | 27 % (typ.) @ 14.5 GHz |
| Maximum Drain Current (ID) | 800 mA |
| Gate‑to‑Drain Voltage (Vgdo) | 15 V |
| Gate‑to‑Source Voltage (Vgso) | 15 V |
| Reverse Gate Current (IGR) | -2.4 mA |
| Forward Gate Current (IGF) | 10 mA |
| Total Power Dissipation (Ptot) | 5 W |
| Storage Temperature Range | -65 °C to +175 °C |
The typical output power is 30.5 dBm at 14.5 GHz.
Recommended bias is VDS = 10 V and IDS = 300 mA.
The device can handle up to 800 mA of drain current.