The MGFC42V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
The MGFC42V3436 is a hermetically sealed, internally impedance‑matched GaAs power FET designed for 3.4‑3.6 GHz band amplifiers. It offers 16 W typical output power, 40 dB linear gain, 37 % typical power‑added efficiency and low distortion (IM3 ≈ ‑45 dBc).
Mitsubishi Electric emphasizes safety in circuit designs, recommending proper placement of auxiliary circuits, use of non‑flammable materials, and adherence to bias conditions of VDS = 10 V, ID = 4.5 A, RG = 25 Ω. The device’s absolute maximum ratings include a drain current of 15 A, total power dissipation of 78.9 W, and operating temperature up to 175 °C.
| Frequency band | 3.4 – 3.6 GHz |
|---|---|
| Typical output power | 16 W |
| Linear power gain | 40 dB |
| Power‑added efficiency (PAE) | 37 % |
| Third‑order IM distortion (IM3) | -45 dBc |
| Gate‑to‑drain breakdown voltage (V_GD) | -15 V |
| Maximum drain current (I_D) | 15 A |
| Total power dissipation | 78.9 W |
| Storage temperature range | -65 °C to +175 °C |
| Maximum operating temperature | 175 °C |
| Recommended bias conditions | VDS = 10 V, ID = 4.5 A, RG = 25 Ω |
The typical output power is 16 W at 3.4 – 3.6 GHz.
Mitsubishi Electric recommends VDS = 10 V, ID = 4.5 A and RG = 25 Ω.
The device can handle a maximum drain current of 15 A.
The typical PAE is 37 % at 3.4 – 3.6 GHz.