MGFC36V6472A is a high power GaAs FET produced by Toshiba, mainly used in 6.4-7.2GHz band power amplifiers.
The MGFC36V6472A is an internally impedance‑matched GaAs power FET designed for 6.4‑7.2 GHz band amplifiers. It is supplied in a hermetically sealed metal‑ceramic package for high reliability.
Key features include Class A operation, 50 Ω matching, high output power (4 W), high gain (9.5 dB), and a typical power‑added efficiency of 30 %. Recommended bias is VDS = 10 V with ID = 1.2 A. Safety and export‑control notices are included.
| Frequency band | 6.4 — 7.2 GHz |
|---|---|
| Gate‑to‑drain breakdown voltage (VGDO) | ‑15 V |
| Total power dissipation | 25 W |
| Storage temperature range | -65 °C to +175 °C |
The recommended bias is VDS = 10 V and ID = 1.2 A.