The MGFC42V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 - 6.4 GHz band amplifiers. It has high reliability, is internally matched to 50 ohm system, and has high output power, high power gain and high power added efficiency.
The MGFC42V5964A is an internally impedance‑matched GaAs power FET designed for 5.9‑6.4 GHz band amplifiers. It offers typical output power of 16 W, a linear gain of about 9 dB, and a power‑added efficiency of 33 % while maintaining low distortion (IM3 = –45 dBc). Recommended bias conditions are VDS = 10 V and ID = 4.5 A.
Mitsubishi Electric emphasizes safety in circuit design, advising the use of non‑flammable materials, protective auxiliary circuits, and proper thermal management. The datasheet includes absolute maximum ratings, electrical characteristics, S‑parameter data, and legal disclaimer information.
| Frequency band | 5.9‑6.4 GHz |
|---|---|
| Typical output power (P1dB) | 16 W |
| Linear power gain (GLP) | 9.0 dB |
| Power‑added efficiency (PAE) | 33 % |
| Third‑order intermodulation (IM3) | -45 dBc |
| Gate‑to‑drain breakdown voltage (V_GD) | 15 V |
| Drain current (ID) max | 15 A |
| Total power dissipation (P_T) | 93.7 W |
| Storage temperature range | -65 °C to +175 °C |
The typical output power is 16 W at frequencies between 5.9 GHz and 6.4 GHz.
Recommended bias is VDS = 10 V with a drain current ID of 4.5 A.
The device can handle a maximum drain current of 15 A.
Typical PAE is 33 % at 5.9‑6.4 GHz.